Featured Research
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Featured Research *
10+ Publications | 35+ Citations | First-Author APL Papers
Direct Detection of 14.1 MeV Fast Neutrons Using h-BN Applied Physics Letters | 2025 First Author
Demonstrated direct detection of 14.1 MeV fast neutrons using stacked quasi-bulk h-BN semiconductor detectors and investigated the influence of detector geometry and interaction path length on detection efficiency.
h-BN | Fast Neutron | Detector
My Contribution
Semiconductor device fabrication
Detector design and packaging
Electrical characterization
DT neutron measurements
Data analysis
Detection-efficiency calculations
Manuscript preparation
Transport Properties of h-BN Lateral Devices
Applied Physics Letters | 2025 First Author
Investigated electrical transport in quasi-bulk h-BN lateral devices and evaluated mobility-lifetime products and charge transport behavior relevant to semiconductor radiation detectors
Charge transport | Device Physics | h-BN
My Contribution
Device fabrication
Electrical measurements
I–V characterization
Mobility-lifetime analysis
Data interpretation
Manuscript preparation
Effective Digital Predistortion (DPD) on a Broadband Millimeter-Wave GaN Power Amplifier Using LTE 64-QAM Waveforms
MDPI Electronics | 2023 First Author
Investigated digital predistortion techniques for improving the linearity of a broadband millimeter-wave GaN power amplifier using LTE 64-QAM modulated signals.
My Contribution:
RF measurements
Power-amplifier characterization
DPD implementation/evaluation
waveform analysis
Linearity analysis
Data interpretation
PUBLICATIONS
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PUBLICATIONS ✳︎
2023
2022
2025
1.) Direct Detection of 14.1 MeV Neutrons by Multi-Stacked h-BN Detector
G. Somasundaram, Z. Alemoush, J. Li, J. Y. Lin, and H. X. Jiang
Applied Physics Letters, 127, 162103 (2025)
First Author
DOI: 10.1063/5.0296469
2.) Development of Millimeter-Thick Hexagonal Boron Nitride Wafers and Fast Neutron Detectors
G. Somasundaram, N. K. Hossain, Z. Alemoush, A. Tingsuwatit, J. Li, J. Y. Lin, and H. X. Jiang
Applied Physics Letters, 126, 212104 (2025)
First Author
DOI: 10.1063/5.0274262
3.) Annealing Effects on Crystalline Quality and Device Performance of Ultrawide Bandgap h-BN Quasi-Bulk Crystals
N. K. Hossain, G. Somasundaram, Z. Alemoush, J. Li, J. Y. Lin, and H. X. Jiang
Applied Physics Letters, 126, 202107 (2025)
DOI: 10.1063/5.0260647
4.) Transport Properties of h-BN Lateral Devices
G. Somasundaram, A. Tingsuwatit, Z. Alemoush, J. Li, J. Y. Lin, and H. X. Jiang
Applied Physics Letters, 126, 043502 (2025)
First Author
DOI: 10.1063/5.0241120
5.) Broadband Linear and Highly-Efficient Millimeter-Wave Power Amplifiers Design in 5G FR2 Band
D. Y. C. Lie, J. C. Mayeda, C. Sweeney, G. Somasundaram, and J. Lopez
2023 Asia-Pacific Microwave Conference (APMC)
December 2023
DOI: 10.1109/APMC57107.2023.10439702
6.) Examples of Linearity Improvement for Millimeter-Wave 5G Power Amplifiers Using Wideband Digital Predistortion (DPD)
G. Somasundaram, C. Sweeney, J. C. Mayeda, D. Y. C. Lie, and J. Lopez
2023 International Conference on Consumer Electronics – Taiwan (ICCE-Taiwan), pp. 437–438
First Author
DOI: 10.1109/ICCE-Taiwan58799.2023.10226872
7.) Effective Digital Predistortion (DPD) on a Broadband Millimeter-Wave GaN Power Amplifier Using LTE 64-QAM Waveforms
G. Somasundaram, J. C. Mayeda, C. Sweeney, D. Y. C. Lie, and J. Lopez
Electronics, 12(13), 2869 (2023)
First Author
DOI: 10.3390/electronics12132869
8.) A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS
L.W. Ouyang, J. C. Mayeda, C. Sweeney, G. Somasundaram, D. Y. C. Lie, and J. Lopez
2023 Sixth International Symposium on Computer, Consumer and Control (IS3C)
DOI: 10.1109/IS3C57901.2023.00067
9.) Effective Linearization of Millimeter-Wave Power Amplifiers Using LUT-Based Digital Predistortion (DPD)
G. Somasundaram, C. J. Mayeda, D. Y. C. Lie, and J. Lopez
2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)
First Author